Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
Lynch, Stephen Anthony
Paul, D. J.
Norris, D. J.
Cullis, A. G.
Kelsall, R. W.
Arnone, D. D.
Pidgeon, C. R.
- Publisher: American Institute of Physics
arxiv: Physics::Optics | Astrophysics::High Energy Astrophysical Phenomena
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.