Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

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Lynch, Stephen Anthony ; Bates, R. ; Paul, D. J. ; Norris, D. J. ; Cullis, A. G. ; Ikonic, Z. ; Kelsall, R. W. ; Harrison, P. ; Arnone, D. D. ; Pidgeon, C. R. (2002)
  • Publisher: American Institute of Physics
  • Related identifiers: doi: 10.1063/1.1501759
  • Subject: QC
    arxiv: Physics::Optics | Astrophysics::High Energy Astrophysical Phenomena

The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.
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