publication . Article . 2002

Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies

S. A. Lynch; R. Bates; D. J. Paul; D. J. Norris; A. G. Cullis; Z. Ikonic; R. W. Kelsall; P. Harrison; D. D. Arnone; C. R. Pidgeon;
Open Access English
  • Published: 26 Aug 2002
  • Publisher: American Institute of Physics
  • Country: United Kingdom
Abstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures.
Subjects
arXiv: Astrophysics::High Energy Astrophysical PhenomenaPhysics::Optics
free text keywords: QC, Optics, business.industry, business, Terahertz radiation, Optoelectronics, Cascade, Electroluminescence, Quantum cascade laser, law.invention, law, Heterojunction, Quantum well, Physics, Direct and indirect band gaps, Semiconductor laser theory
Related Organizations
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