Simulated  Si-SiGe terahertz quantum cascade laser
Kelsall, R. W.
- Publisher: American Institute of Physics
The prospect of developing a silicon laser has long been \ud an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the  crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.\ud