publication . Article . 2008

Simulated [111] Si–SiGe terahertz quantum cascade laser

L. Lever; A. Valavanis; Z. Ikonić; R. W. Kelsall;
Open Access English
  • Published: 14 Jan 2008
  • Publisher: American Institute of Physics
  • Country: United Kingdom
Abstract
The prospect of developing a silicon laser has long been \ud an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.\ud
Subjects
free text keywords: Physics and Astronomy (miscellaneous), Rate equation, Far-infrared laser, Physics, Optics, business.industry, business, Optoelectronics, Laser power scaling, Terahertz radiation, Terahertz spectroscopy and technology, Photomixing, Laser, law.invention, law, Direct and indirect band gaps
28 references, page 1 of 2

2 )120 m

(A100

isn 80

tn 60

uC40

Electric field (kV/cm) 14 16 ∗ Electronic address: l.j.m.lever@leeds.ac.uk

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