Simulated [111] Si-SiGe terahertz quantum cascade laser

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Lever, L. ; Valavanis, A. ; Ikonic, Z. ; Kelsall, R. W. (2008)
  • Publisher: American Institute of Physics

The prospect of developing a silicon laser has long been \ud an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon and Coulombic interactions. We predict gain greater than 40 cm<sup>-</sup>1 and a threshold current density of 70 A/cm<sup>2</sup>.\ud
  • References (28)
    28 references, page 1 of 3

    2 )120 m

    (A100

    isn 80

    tn 60

    uC40

    Electric field (kV/cm) 14 16 ∗ Electronic address: l.j.m.lever@leeds.ac.uk

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