A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor\ud capacitor

Article English OPEN
Cho, S.J. ; Roberts, J. ; Guiney, I. ; Li, X. ; Ternent, G. ; Floros, K. ; Humphreys, C.J. ; Chalker, P. ; Thayne, I.G. (2015)
  • Publisher: Elsevier
  • Journal: Microelectronic Engineering (issn: 0167-9317, vol: 147, pp: 277-280)
  • Related identifiers: doi: 10.1016/j.mee.2015.04.067
  • Subject: Condensed Matter Physics | Surfaces, Coatings and Films | TK | Electrical and Electronic Engineering | Electronic, Optical and Magnetic Materials | Atomic and Molecular Physics, and Optics

The impact of subjecting a n-GaN surface to an in-situ argon plasma in an atomic layer deposition (ALD)\ud tool immediately before deposition of an Al2O3 dielectric film is assessed by frequency dependent\ud evaluation of Al2O3/GaN MOSCAPs. In comparison with a control with no pre-treatment, the use of a\ud 50 W argon plasma for 5 min reduced hysteresis from 0.25 V to 0.07 V, frequency dispersion from\ud 0.31 V to 0.03 V and minimum interface state density (Dit) as determined by the conductance method\ud from 6.8 1012 cm2 eV1 to 5.05 1010 cm2 eV1\ud .\ud 201
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