Monolithic integration of a silicon-based photonic transceiver in a CMOS process

Article English OPEN
Gonzalez-Fernandez, A.A. ; Juvert, J. ; Aceves-Mijares, M. ; Dominguez, C. (2016)
  • Publisher: Institute of Electrical and Electronics Engineers
  • Related identifiers: doi: 10.1109/JPHOT.2015.2505144
  • Subject:
    acm: Hardware_INTEGRATEDCIRCUITS

This work presents the design, fabrication, and characterization of a monolithic and complementary-metal-oxide-semiconductor (CMOS)-based integrated optical system, including the light emitter working in the visible range, waveguide, and photodetector. The presented system aims to be applied for the development of optochemical sensors. The work presents the proposed concept and the integration strategy, as well as the fabrication process. The individual elements of the system are theoretically evaluated to assure compatibility among them. Then, the fabrication and studies to the complete system are presented. The response of the light sensor is shown to be caused by optical stimulation of light originated in the integrated light source and transmitted through a dielectric waveguide, thus validating the integration procedure.
  • References (21)
    21 references, page 1 of 3

    [1] M. C. Estevez, M. Alvarez, and L. M. Lechuga, “Integrated optical devices for lab-on-a-chip biosensing applications,” Laser Photon. Rev., vol. 6, no. 4, pp. 463-487, Jul. 2012.

    [2] B. Maisenhölder et al., “Monolithically integrated optical interferometer for refractometry,” Electron. Lett., vol. 33, no. 11, pp. 986-988, May 1997.

    [3] M. E. Goosen et al., “High speed CMOS optical communication using silicon light emitters,” in Proc. SPIE Optoelectron. Interconn. Compon. Integr., San Francisco, CA, USA, 2011, vol. 7944, p. 79440X.

    [4] J. Noborisaka, K. Nishiguchi, and A. Fujiwara, “Electric tuning of direct-indirect optical transitions in silicon,” Sci. Rep., vol. 4, Nov. 2014, Art. ID 6950.

    [5] B. Chmielak et al., “Pockels effect based fully integrated, strained silicon electro-optic modulator,” Opt. Exp., vol. 19, no. 18, pp. 17212-17219, Aug. 2011.

    [6] L. Liao et al., “High speed silicon Mach-Zehnder modulator,” Opt. Exp., vol. 13, no. 8, pp. 3129-3135, Apr. 2005.

    [7] S. S. Djordjevic et al., “CMOS-compatible, athermal silicon ring modulators clad with titanium dioxide,” Opt. Exp., vol. 21, no. 12, pp. 13958-13968, Jun. 2013.

    [8] D. Duval, J. Osmond, S. Dante, C. Domínguez, and L. M. Lechuga, “Grating couplers integrated on Mach-Zehnder interferometric biosensors operating in the visible range,” IEEE Photon. J., vol. 5, no. 2, Apr. 2013, Art. ID 3700108.

    [9] K. Misiakos et al., “All-silicon monolithic Mach-Zehnder interferometer as a refractive index and biochemical sensor,” Opt. Exp., vol. 22, no. 22, pp. 26803-26813, Apr. 2014.

    [10] K. Misiakos, S. E. Kakabakos, P. S. Petrou, and H. H. Ruf, “A monolithic silicon optoelectronic transducer as a realtime affinity biosensor,” Anal. Chem., vol. 76, no. 5, pp. 1366-73, Mar. 2004.

  • Metrics
    No metrics available
Share - Bookmark