Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells

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Capizzi, M.; Coluzza, C.; Emiliani, V.; Frankl, P.; Frova, A.; Sarto, F.; Bonapasta, A. A.; Sobiesierski, Zbigniew; Sacks, R. N.;

Direct observation of optical emission from H‐related complexes in molecular beam epitaxy grown bulk GaAs and GaAlAs, as well as InGaAs/GaAs strained multiquantum wells (MQWs), is obtained from liquid He photoluminescence experiments. Hydrogenation is achieved by low‐en... View more
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    'See, for instance, articles in Proceedings of the 1990 IUPAP-ICTP Trieste Symposium: Hydrogen in Semiconductors: Bulk and Surface, edited by M. Stutzmann and J. Chevallier (Physica B 170, North-Holland, 1991); seealso articles in Hydrogen in Semiconductors, edited by J. I. Pankove and N. M. Johnson, Semiconductors and Semimeth (Academic, New York, 1991), Vol. 34.

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    5W e find a weak band at - 1.22eV in liquid phaseepitaxy GaAs grown by R. A. Logan, and at 1.24 eV in MBE material grown by G. Weimann.

    6Z. Sobiesierski, D. A. Woolf, D. I. Westwood, A. Frova, and C. Coluzza, Solid State Commun. 81, 125 (1992); also, M. Capizzi, V. Emiliani, A. Frova, and F. Sat-to (unpublished).

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