Electrical characterisation of defects in wide bandgap semiconductors.

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Elsherif, Osama S.;
  • Publisher: Sheffield Hallam University,

Defects usually have a very large influence on the semiconductor material properties and hence on fabricated electronic devices. The nature and properties of defects in semiconducting materials can be investigated by applying electrical characterization techniques such ... View more
  • References (20)
    20 references, page 1 of 2

    1) O. Elsherif, K.D. Vernon-Parry, I.M. Dharmadasa, J.H. Evans-Freeman, R J. Airey, M J. Kappers, C.J. Humphreys, Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements , Thin Solid Films, 520 (2012) 3064-3070.

    2) O. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, P.W. May, " Effect of doping on electronic states in B-doped polycrystalline CVD diamond films ", Semiconductor Science and Technology 27 (2012) 065019.

    3) O. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, R.J. Airey, M. Kappers, C.J. Humphreys, Characterisation of defects in p-GaN by admittance spectroscopy , Physica B 407 (2012) 2960-2963.

    4) O. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, P.W. May, "Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Film s", Materials Science Forum 717-720 (2012) 1315-1318.

    5) I.M. Dharmadasa, O. Elsherif, G.J. Tolan, "Experimental Evidence for Impurity Photovoltaic Effect in GaAs/AlGaAs Based Graded Bandgap Multi-Layer Solar Cells", Proceedings o f 25th European Photovoltaic Solar Energy C onference/5th World Conference on Photovoltaic Energy Conversion, (2010), Pages 583-586. (Outside the scope o f this thesis).

    6) I.M. Dharmadasa, O. Elsherif, G.J. Tolan, "Solar Cells Active in Complete Darkness", Journal o f Physics: Conference Series 286 (2011) 012041. (Outside the scope o f this thesis).

    1) O. E lsh erif, J.H. Evans-Freeman, K.D. Vernon-Parry, N. Mitromara and P.W. May, "High Resolution Deep Level Transient Spectroscopy of p -type polycrystalline diamond on p-type silicon", 25th International Conference on Defects in Semiconductors (ICDS-25), 20-24 July, 2009, St. Petersburg, Russia.

    2) O. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, I.M. Dharmadasa, R.J. Airey, M.J. Kappers and C.J. Humphreys, "Thermal activation energies of Mg in GaN:Mg on HT- AlN/sapphire characterized by admittance spectroscopy", UK Semiconductors 2010: Conference, 7-8 July 2010, Sheffield, UK.

    3) O. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, R.J. Airey, M.J. Kappers and C.J. Humphreys, "Admittance spectroscopy characterisation of Mg in GaN:Mg on HT AlN/sapphire", Defects in Semiconductors: Gordon Research conferences, 8-13 August, 2010, New London, NH, USA.

    4) I.M. Dharmadasa, O. Elsherif, G.J. Tolan, "Solar Cells Active in Complete Darkness", Condensed Matter and Materials Physics Conference (CMMP10), 14-16 Dec 2010, Warwick, UK.

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