From STM to nanomemory: a transfer of technology feasibility study

Doctoral thesis English OPEN
Miller, Jimmie Andrew
  • Subject: TK | QA76

Recent years have seen exponential increase in memory capacity for computer data storage. Increased bit density has been produced by decreasing feature sizes in microelectronic fabrication. As minimum microelectronic feature sizes are realized, new methods are being investigated to continue the increase in recording bit density.\ud This report examines features which are necessary to produce an electron-tunneling based memory which is postulated to increase the data density by a factor of 105-106 over current manufactured memories. A description is given for combining tunneling microscopy with memory technology to achieve this high density memory. Experiments using a tunneling tip to produce nanometer scale features on a surface are recounted. The repeatability and durability of the produced features are investigated with a summary of these aspects included for various materials reported in the literature. Some necessary mechanical and electrical design criteria for a tunneling memory are obtained. Observed and reported inconsistency in nanometer lithography are attributed to nonpredictable tunneling currents and resulting tip-sample separations. Experimental and theoretical work scrutinizing tunneling currents as a function of tip-sample displacement is included. Other factors affecting the practicality of a tunneling based memory are also incorporated.
  • References (57)
    57 references, page 1 of 6

    W., and Pease R. F. W., "Imaging and modification of polymers by scanning tunneling and atomic force microscopy", J. Appl. Phys. 64, 1178 (1988).

    Lett. 55, 1727 (1989).

    Binnig, G., Rohrer, H., Gerber, Ch., and Weibel, E., "Surface studies by scanning tunneling microscopy", Phys. Rev. Lett. 49, 57 (1982).

    Binnig, G., and Rorher, H., "Scanning tunneling microscopy, and atomic probe", Scanning Electron Microscopy/1983/III 1079 (1983).

    Lett. 1, 36 (1986a).

    Binnig, G., Garcia, N., Rohrer, H., Soler, J. M., and Flores, F., "Electron-metal-surface interaction with vacuum tunneling: observation of the image force", Phys. Rev. B 30(8), 4816 (1984).

    Binnig, G., and Rohrer, H., "Scanning tunneling microscopy", IBM J. Res. Dev. 30, 355 (1986b).

    Bocko, Mark F., Stephenson, Kendall A., and Koch, Roger H., "Vacuum Tunneling Probe: A Reduced-Back-Action Transducer", Phys. Rev. Lett. 61, 726 (1988).

    Bocko, Mark F., "The scanning tunneling microscope as a high gain, low noise displacement sensor", Rev. Sci. Instrum. 61, 3763 (1990).

    Bryant, A., Smith D. P. E., Binnig G., Harrison, W. A., and Quate C. F., "Anomalous distance dependance in scanning tunneling microscopy", Appl. Phys. Lett. 49, 936 (1986).

  • Metrics
    views in OpenAIRE
    views in local repository
    downloads in local repository

    The information is available from the following content providers:

    From Number Of Views Number Of Downloads
    Warwick Research Archives Portal Repository - IRUS-UK 0 48
Share - Bookmark