Atomistic Simulations of the Efficiencies of Ge and Pt Ion Implantation into Graphene

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Åhlgren, E. H..; Markevich, A..; Besley, E..;
  • Publisher: American Chemical Society
  • Subject: Physical and Theoretical Chemistry | Surfaces, Coatings and Films | Electronic, Optical and Magnetic Materials | General Energy
    arxiv: Physics::Plasma Physics | Physics::Atomic and Molecular Clusters

Recent success in the direct implantation of 74Ge+ ion, the heaviest atomic impurity to date, into monolayer graphene presents a general question of the efficiency of low-energy ion implantation technique for heavy atoms. A comparative computational study, using classic... View more
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