Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design\ud

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Ray, S.K. ; Groom, K.M. ; Hogg, R.A. ; Liu, H.Y. ; Hopkinson, M. ; Badcock, T. ; Mowbray, D.J. ; Skolnick, M.S. (2005)

In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.
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