Improved Temperature Performance of 1.31-mu/m Quantum Dot Lasers by Optimized Ridge Waveguide Design\ud

Article English OPEN
Ray, S.K. ; Groom, K.M. ; Hogg, R.A. ; Liu, H.Y. ; Hopkinson, M. ; Badcock, T. ; Mowbray, D.J. ; Skolnick, M.S. (2005)

In this letter, we demonstrate the importance of the fabricated device structure for the external differential efficiency, threshold current density, and maximum operating temperature for ground state operation of a 1.31-mu/m quantum dot laser. The introduction of a shallow ridge etch design and selective electroplating of the gold bondpads is demonstrated to offer improved performance in comparison to a deep ridge etch design with thinner evaporated gold bondpads.
  • References (7)

    [1] Y. Arakawa and H. Sakaki, “Multidimentional quantum well laser and temperature dependence of its threshold current,” Appl. Phys. Lett., vol. 40, pp. 939-941, Jun. 1982.

    [2] S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, and N. N. Ledentsov, “The role of Auger recombination in the temperature-dependent output characteristics (T =/) of p-doped 1.3 m quantum dot lasers,” Appl. Phys. Lett., vol. 85, pp. 5164-5166, 2004.

    [3] K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, “Temperature-insensitive eyeoperating under 10-Gb/s modulation of 1.3 m P-doped quantum-dot lasers without current adjustment,” Jpn. J. Appl. Phys., vol. 43, no. 8B, pp. L1124-L1126, 2004.

    [4] H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland, “Improved performance of 1.3 m multiplayer InAS/GaAs quantum dot laser using a high-growth-temperature GaAs spacer layer,” Appl. Phys. Lett., vol. 85, pp. 704-706, 2004.

    [5] H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray, and M. S. Skolnick, “Influence of the spacer layer growth temperature on multiplayer InAs/GaAs quantum dot structure,” J. Appl. Phys., vol. 96, pp. 1988-1992, 2004.

    [6] S. K. Ray, K. M. Groom, H. Y. Liu, M. Hopkinson, R. A. Hogg, I. R. Seller, T. Badcock, A. J. Ramsay, D. J. Mowbray, and M. S. Skolnick, “Growth, fabrication and operating characteristics of ultra-low threshold 1.31 m quantum dot lasers,” Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2520-2522, 2005, to be published.

    [7] A. Markus, J. X. Chen, C. Paranthoen, C. Platz, O. Gauthier-Lafaye, and A. Fiore, “Simultaneous two-state lasing in quantum dot lasers,” Appl. Phys. Lett., vol. 82, pp. 1818-1820, 2003.

  • Metrics
    views in OpenAIRE
    views in local repository
    downloads in local repository

    The information is available from the following content providers:

    From Number Of Views Number Of Downloads
    White Rose Research Online - IRUS-UK 0 13
Share - Bookmark