Double-layer-gate architecture for few-hole GaAs quantum dots
- Publisher: IOP Publishing
arxiv: Condensed Matter::Materials Science | Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode AlxGa1-xAs/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.
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