Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

Part of book or chapter of book English OPEN
Sinnott, R.O. ; Asenov, A. ; Brown, A. ; Millar, C. ; Roy, G. ; Roy, S. ; Stewart, G. (2007)
  • Publisher: National e-Science Centre
  • Subject: TK | QA75

The fundamental challenges facing future electronics design is to address the decreasing – atomistic - scale of transistor devices and to understand and predict the impact and statistical variability these have on design of circuits and systems. The EPSRC pilot project “Meeting the Design Challenges of nanoCMOS Electronics” (nanoCMOS) which began in October 2006 has been funded to explore this space. This paper outlines the key requirements that need to be addressed for Grid technology to support the various research strands in this domain, and shows early prototypes demonstrating how these requirements are being addressed.
  • References (36)
    36 references, page 1 of 4

    B. Doris at al. Extreme scaling with ultrathin Si channel MOSFETs, IEDM 2002 Tech. Dig. p. 267 (2002).

    H. P. Tuinhout, Impact of parametric mismatch and fluctuations on performance and yield of deep-submicron CMOS technologies, Proc. ESSDERC, pp.95-101, Florence, Italy, 2002.

    46, pp 315-320 (2002).

    K. Takeuchi, R. Koh and T. Mogami, A study of the threshold voltage variation for ultra-small bulk and SOI CMOS, IEEE Trans. Electron Dev, vol. 48, p.

    T. Mizuno, J. Okamura and A. Toriumi, Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's, IEEE Trans. Electron Devices, Vol. 41, pp. 2216-2221, (1994).

    Watling, Intrinsic Fluctuations in Sub 10 nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter, IEEE Transaction on Nanotechnology, Vol. 1 pp. 195-200 (2002).

    Klaassen, Device modeling of statistical dopant fluctuations in MOS transistors, Proc. SISPAD'97, pp. 153 - 156, 1997.

    Wong H.-S. and Taur Y. Three dimensional 'atomistic' simulation of discrete random dopant distribution effects in sub-0.1 mm MOSFETs, Proc.

    IEDM Dig. Tech. Papers., pp. 705-708, 1993

    Wong, Monte Carlo modelling of threshold variation due to dopant fluctuations, 1999 Symposium on VLSI Technology Digital Technology Papers, pp 169-170, 1999.

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