Controlling nanowire nucleation and growth with a negative substrate bias

Article English OPEN
Ball, J ; Reehal, HS (2016)

The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested.
  • Metrics
    0
    views in OpenAIRE
    0
    views in local repository
    5
    downloads in local repository

    The information is available from the following content providers:

    From Number Of Views Number Of Downloads
    LSBU Research Open - IRUS-UK 0 5
Share - Bookmark