Controlling nanowire nucleation and growth with a negative substrate bias

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Ball, J ; Reehal, HS (2016)

The varied applications of silicon nanowires can influence the required wire density, diameter and length. We demonstrate the ability to control wire nucleation, diameter and length with the use of a negative substrate bias generated with the application of a RF signal in an electron cyclotron resonance chemical vapour deposition system. Growing nanowires from 0 V to −100 V bias we observe trends in the density, length and diameter in wires grown from two different thicknesses of Au. A model for the observed results is suggested.
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