publication . Article . 2015

FinFET centric variability-aware compact model extraction and generation technology supporting DTCO

Wang, Xingsheng; Cheng, Binjie; Reid, David; Pender, Andrew; Asenov, Plamen; Millar, Campbell; Asenov, Asen;
Open Access English
  • Published: 01 Oct 2015
  • Publisher: Institute of Electrical and Electronics Engineers
  • Country: United Kingdom
In this paper, we present a FinFET-focused variability-aware compact model (CM) extraction and generation technology supporting design-technology co-optimization. The 14-nm CMOS technology generation silicon on insulator FinFETs are used as testbed transistors to illustrate our approach. The TCAD simulations include a long-range process-induced variability using a design of experiment approach and short-range purely statistical variability (mismatch). The CM extraction supports a hierarchical CM approach, including nominal CM extraction, response surface CM extraction, and statistical CM extraction. The accurate CM generation technology captures the often non-Ga...
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