Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs

Article English OPEN
Gurpinar, Emre ; Castellazzi, Alberto (2015)

In this paper, benchmark of Si IGBT, SiC MOSFET and GaN HEMT power switches at 600V class is conducted in single-phase T-type inverter. Gate driver requirements, switching performance, inverter efficiency performance, heat sink volume, output filter volume and dead-time effect for each technology is evaluated. Gate driver study shows that GaN has the lowest gate driver losses above 100kHz and below 100kHz, SiC has lowest gate losses. GaN has the best switching performance among three technologies that allows high efficiency at high frequency applications. GaN based inverter operated at 160kHz switching frequency with 97.3% efficiency at 2.5kW output power. Performance of three device technologies at different temperature, switching frequency and load conditions shows that heat sink volume of the converter can be reduced by 2.5 times by switching from Si to GaN solution at 60°C case temperature, and for SiC and GaN, heat sink volume can be reduced by 2.36 and 4.92 times respectively by increasing heat sink temperature to 100°C. Output filter volume can be reduced by 43% with 24W, 26W and 61W increase in device power loss for GaN, SiC and Si based converters respectively. WBG devices allow reduction of harmonic distortion at output current from 3.5% to 1.5% at 100kHz.
  • References (46)
    46 references, page 1 of 5

    [1] J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “A Survey of Wide Bandgap Power Semiconductor Devices,” IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, may 2014.

    [2] D. Kranzer, C. Wilhelm, F. Reiners, and B. Burger, “Application of normally-off SiC-JFETs in photovoltaic inverters,” in Power Electronics and Applications, 2009. EPE '09., 2009, pp. 1-6.

    [3] C. Wilhelm, D. Kranzer, and B. Burger, “Development of a highly compact and efficient solar inverter with Silicon Carbide transistors,” in Integrated Power Electronics Systems (CIPS), 2010, 2010, pp. 1-6.

    [4] B. Burger and D. Kranzer, “Extreme high efficiency PV-power converters,” in Power Electronics and Applications, 2009. EPE '09., 2009, pp. 1-13.

    [5] D. Barater, G. Buticchi, C. Concari, G. Franceschini, E. Gurpinar, D. De, and A. Castellazzi, “Performance analysis of UniTL-H6 inverter with SiC MOSFETs,” in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA). IEEE, may 2014, pp. 433-439.

    [6] E. Gurpinar, D. De, A. Castellazzi, D. Barater, G. Buticchi, and G. Francheschini, “Performance analysis of SiC MOSFET based 3-level ANPC grid-connected inverter with novel modulation scheme,” in 2014 IEEE 15th Workshop on Control and Modeling for Power Electronics (COMPEL). IEEE, jun 2014, pp. 1-7.

    [7] D. De, A. Castellazzi, A. Solomon, A. Trentin, M. Minami, and T. Hikihara, “An all SiC MOSFET high performance PV converter cell,” in 2013 15th European Conference on Power Electronics and Applications, EPE 2013. IEEE, sep 2013, pp. 1-10.

    [8] A. Hensel, C. Wilhelm, and D. Kranzer, “Application of a new 600 V GaN transistor in power electronics for PV systems,” in 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC). IEEE, sep 2012, pp. DS3d.4-1-DS3d.4-5.

    [9] T. Ueda, “Recent advances and future prospects on GaN-based power devices,” in 2014 International Power Electronics Conference (IPECHiroshima 2014 - ECCE ASIA). IEEE, may 2014, pp. 2075-2078.

    [10] T. Morita, S. Tamura, Y. Anda, M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, “99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors,” in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, mar 2011, pp. 481-484.

  • Metrics
    No metrics available
Share - Bookmark