Structural and electrical characterization of AuPtAlTi ohmiccontacts to AlGaN/GaN with varying annealing temperature andAl content

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Fay, Mike W..; Han, Y..; Brown, Paul D..; Harrison, Ian.; Hilton, K.P..; Munday, A..; Wallis, D..; Balmer, R.S..; Uren, M.J..; Martin, T..;
(2008)
  • Publisher: AIP Publishing
  • Subject: N-TYPE GANFIELD-EFFECT TRANSISTORSTHERMAL-STABILITYRESISTANCETIMICROSTRUCTUREMULTILAYERSPERFORMANCE

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfaci... View more
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