Performance of a high resolution chemically amplified electron beam resist at various beam energies
- Publisher: Elsevier BV
Condensed Matter Physics | Surfaces, Coatings and Films | Electrical and Electronic Engineering | Electronic, Optical and Magnetic Materials | Atomic and Molecular Physics, and Optics
A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.