Performance of a high resolution chemically amplified electron beam resist at various beam energies

Article English OPEN
Yang, D.X. ; Frommhold, A. ; McClelland, A. ; Roth, J. ; Rosamond, M. ; Linfield, E.H. ; Osmond, J. ; Palmer, R.E. ; Robinson, A.P.G. (2016)
  • Publisher: Elsevier BV
  • Journal: Microelectronic Engineering, volume 155, pages 97-101 (issn: 0167-9317)
  • Related identifiers: doi: 10.1016/j.mee.2016.03.010
  • Subject: Condensed Matter Physics | Surfaces, Coatings and Films | Electrical and Electronic Engineering | Electronic, Optical and Magnetic Materials | Atomic and Molecular Physics, and Optics

A novel negative tone molecular resist molecule featuring a tert-butyloxycarbonyl protected phenol malonate group bonded to a 1,8-Diazabicycloundece-7-ene is presented. The resist shows high-resolution capability in electron beam lithography at a range of beam energies. The resist demonstrated a sensitivity of 18.7 μC/cm2 at 20 kV. Dense features with a line width of 15 nm have been demonstrated at 30 kV, whilst a feature size of 12.5 nm was achieved for dense lines at 100 kV.
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