Structural characterisation of MBE grown zinc-blende \ud Ga1-xMnxN/GaAs(001) as a function of Ga flux

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Han, Y. ; Fay, Mike W. ; Brown, Paul D. ; Novikov, Sergei V. ; Edmonds, K.W. ; Gallagher, B.L. ; Campion, R.P. ; Foxon, C.T. (2005)
  • Publisher: Springer-Verlag

Ga1-xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.
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