We report combustion synthesis of polycrystalline Aluminium doped zinc oxide (AZO) at low temperature for next generation low cost, flexible thin film transistor (TFT) application. Solution processed AZO thin film has been characterized by X ray diffraction and atomic f... View more
Peng, “Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-bandgap Ta2O5,” Appl. Phys. Lett., vol. 102, no. 24, p.
Nguyen, and R. S. Ruoff, “Graphene-based composite materials.,” Nature, vol. 442, no. 7100, pp. 282-286, 2006. View C. Li, Y. Li, Y. Wu, B. Ong, and R. Loutfy, “Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors,” J. Mater. Chem., vol. 19, pp. 1626- 16341634, 2009.
X. Xu, L. Feng, S. He, Y. Jin, and X. Guo, “Solutionprocessed zinc oxide thin-film transistors with a lowtemperature polymer passivation layer,” IEEE Electron Device Lett., vol. 33, no. 10, pp. 1420-1422, 2012.
P. F. Carcia, R. S. McLean, and M. H. Reilly, “Highperformance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition,” Appl. Phys. Lett., vol. 88, no. 2006, pp. 10-13, 2006.
J. H. Jun, B. Park, K. Cho, and S. Kim, “Flexible TFTs based on solution-processed ZnO nanoparticles.,” Nanotechnology, vol. 20, p. 505201, 2009.
Kim, “Low-temperature, solution-processed and alkali metal doped zno for high-performance thin-film transistors,” Adv. Mater., vol. 24, pp. 834-838, 2012.
Leedham, J. Rickard, and H. Sirringhaus, “Lowtemperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process.,” Nat. Mater., vol. 10, no. 1, pp. 45-50, 2011.
Chem. C, vol. 2, no. 21, pp. 4247-4256, 2014.
Wang, J. Chen, and J. Xu, “RSC Advances dielectric for combustion derived oxide thin fi lm,” RSC Adv., vol. 4, no. 3, pp. 54729-54739, 2014.
Hennek, Jonathan W., Jeremy Smith, Aiming Yan, Myung-Gil Kim, Wei Zhao, Vinayak P. Dravid, Antonio Facchetti, and Tobin J. Marks, “Oxygen “getter” effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X= Ga, Sc, Y, La) transistors." J. Am. Chem. Soc, 135, no. 29, pp. 10729-10741, 2013.