publication . Article . 2016

Low Temperature Combustion Processed Stable Al Doped ZnO Thin Film Transistor: Process Extendable up to Flexible Devices

Venkateshwarlu Sarangi; Srinivas Gandla;
Open Access English
  • Published: 11 Dec 2016 Journal: Journal of Modern Materials (issn: 2456-4834, eissn: 2456-4834, Copyright policy)
  • Publisher: AIJR Publisher
Abstract
<jats:p>We report combustion synthesis of polycrystalline Aluminium doped zinc oxide (AZO) at low temperature for next generation low cost, flexible thin film transistor (TFT) application. Solution processed AZO thin film has been characterized by X ray diffraction and atomic force microscopy to confirm crystallinity. In this research work TFT with solution processed AZO as channel layer has been fabricated on both rigid and flexible substrate which exhibits excellent electrical stability and improved field effect mobility of 1.2 cm2V-1S-1, threshold voltage of 15 V and on-off ratio of 106as compared to pure ZnO based TFT. All the measurements have been carried ...
Subjects
free text keywords: Aluminium, ZnO, Combustion synthesis, Doping, Flexible Films, Thin Film Transistor, TFT, Flexible Devices, Low temperature, Spin Coating, XRD, SEM, AFM, XPS, Electronic engineering, Thin-film transistor, Optoelectronics, business.industry, business, Threshold voltage, Field effect, Crystallinity, Thin film, Materials science, X-ray photoelectron spectroscopy
Related Organizations
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