publication . Article . 2018

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

Shagufta Bano Husain; Maruph Hasan;
Open Access English
  • Published: 04 Jun 2018 Journal: Journal of Modern Materials (issn: 2456-4834, eissn: 2456-4834, Copyright policy)
  • Publisher: AIJR Publisher
Abstract
<jats:p>This paper presents the recent advances in semiconductor alloys for photovoltaic applications. The two main growth techniques involved in these compounds are metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), that has also been discussed. With these techniques, hetero-structures can be grown with a high efficiency. A combination of more than one semiconductor like GaAs, InGaAs and CuInGaAs increases the range of their electrical and optical properties. A large range of direct band gap, high optical absorption and emission coefficients make these materials optimally suitable for converting the light to electrical energy. The...
Subjects
arXiv: Condensed Matter::Materials Science
free text keywords: Materials science, Semiconductor, business.industry, business, Molecular beam epitaxy, Chemical vapor deposition, Metalorganic vapour phase epitaxy, Epitaxy, Direct and indirect band gaps, Optoelectronics, Photovoltaic system, Electric potential energy
Powered by OpenAIRE Open Research Graph
Any information missing or wrong?Report an Issue
publication . Article . 2018

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

Shagufta Bano Husain; Maruph Hasan;