project . 2015 - 2016 . Closed

R2RAM

Radiation Hard Resistive Random-Access Memory
Open Access mandate for Publications European Commission
  • Funder: European CommissionProject code: 640073 Call for proposal: H2020-COMPET-2014
  • Funded under: H2020 | RIA Overall Budget: 1,039,360 EURFunder Contribution: 1,039,360 EUR
  • Status: Closed
  • Start Date
    01 Jan 2015
    End Date
    31 Dec 2016
  • Detailed project information (CORDIS)
  • Open Access mandate
    Research Data: No
Description
The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don’t affect the switching mechanism. Semiconductor memories,...
Description
The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don’t affect the switching mechanism. Semiconductor memories,...
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