research product . Other ORP type . 2017 . Embargo end date: 28 Apr 2017

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Saxena, Dhruv;
English
  • Published: 01 Jan 2017
  • Publisher: The Australian National University
Abstract
The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor ...
Subjects
arXiv: Physics::OpticsCondensed Matter::Materials ScienceCondensed Matter::Mesoscopic Systems and Quantum Hall Effect
free text keywords: III-V semiconductor nanowires, nanowire laser, nanolaser, Gallium Arsenide, GaAs nanowire lasers, Indium Phosphide, InP nanowire lasers, quantum well lasers, optoelectronic devices, nanophotonics
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