PUNCH offers a solution for time-deterministic and time-sensitive networks by developing a new optical switching paradigm which (I) breaks the trade-off between flexibility (ultra-dynamic reconfigurability) and determinism (guaranteed latency and jitter) by offering an all-to-all reconfigurable interconnect; (II) reduces congestion by activating bandwidth steering so that additional capacity can be allocated between hot nodes in the network; (III) provides unparalleled dynamics and bandwidth efficiency by further enabling multiplexing in the time domain with fast reconfigurable capability. A 2×2×8Lambda wavelength selective switching element will be scaled to a fully non-blocking 8x8x8Lambda and 16x16x8Lambda reconfigurable optical switch fabric. The development of a micro-transfer-printing process for semiconductor optical amplifiers enables loss-less optical switching on a silicon photonics platform. Custom configuration electronic ICs to actuate, control, and power-monitor a scaled switch fabric will be densely integrated with the photonic ICs into a heterogeneous fanout wafer-level package, processed on a 200mm reconstructed wafer platform. In addition, the optical interfacing to the photonic ICs will be accomplished using an optical redistribution layer, providing an optical fanout on high-density organic substrates, and allowing for a scalable optical fiber packaging solution. The novel integration and packaging processes will be applied for manufacturing 1.6 Tbit/s optical transceivers providing the interface between optical switches and electronic resources (compute, memory, and storage). The optical switch and transceiver prototypes will be demonstrated in a 5G RAN Transport Network, for TSN Fronthaul applications and for memory disaggregation in data centers.

Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications. This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. This requires the optimization of the GaN materials stack and device layout to enable fabrication of normally-off devices for such low temperature integration processes (max 400oC). In addition, new soft magnetic core materials reaching switching frequencies up to 200 Mhz with ultralow power losses will be developed. This will be assembled with new materials and methods for miniaturised packages to allow GaN devices, modules and systems to operate under maximum speed and energy efficiency. A special focus is on the long term reliability improvements over the full value chain of materials, devices, modules and systems. This is enabled by the choice of consortium partners that cover the entire value chain from universities, research centers, SME’s, large industries and vendors that incorporate the developed technology into practical systems such as datacenters, automotive, aviation and e-mobility bikes

The European microelectronics (ME) industry has a direct impact on approximately 20% of the European GDP and employs over 250,000 people, with more than 64,000 job vacancies. The main technological challenges are 1) to increase both the reliability of the manufactured electronic components and systems (ECS) and sustainability to meet the requirements of the new EU directive Right to Repair, and 2) to reduce the huge product verification effort (70% of total product development time) that represents a substantial burden on costs and resources. To compete with China and North America, the European ME industry is in critical need of cross-discipline experts in electronic manufacturing and digital innovations: software, data and artificial intelligence. The main goal of the MIRELAI industrial doctorate programme is to train the next generation of engineers and scientists for the next generation of reliable and repairable ECS developed within a trustworthy European value chain. The scientific approach is based on three pillars: 1) physics of degradation, 2) multi-scale modeling and 3) AI-based reliability which in sum will add up to a reinvention and new level of efficiency for the ‘design for repair and reliability’ for ECS. Our unique industry-academia partnership of 8 industries, 4 SMEs and 9 research organisations and academic institutions from 7 European countries has all the expertise, experience and capacity along the electronics system value chain to deliver this ambitious research and training programme. Shared hosting and joint supervision by industry and academia of each of the 13 doctoral candidates ensures optimal knowledge transfer. Together, we will pave the way for sustainable, repairable and energy efficient electronic system designs and resource-friendly smart electronics applications. MIRELAI is thus perfectly aligned with the European research agenda and the EU Pact for Skills, a shared engagement model for skills development in Europe.