The particle flow approach to calorimetry can provide unprecedented jet energy resolution at a future high energy collider, such as the International Linear Collider (ILC). However, the use of particle flow calorimetry at the proposed multi-TeV Compact Linear Collider (...

This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation de...

Comment: 11 pages, 9 figures, PSD10: 10th International Conference on Position Sensitive Detectors. Updated from minor revisions requested from referee

This work was performed in the framework of the CERN-RD50 collaboration under the project RD50-2015-03. The project has received funding from the European Commission under the FP7 Research Infrastructures project AIDA, grant agreement no. 262025. This project has been p...

Comment: 10 pages, 9 figures, submitted to Elsevier for publication in Nucl. Instr. Meth. in Phys. Research A

In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the signific...

This paper focuses on the performance of analog readout electronics (built-in amplifier) integrated on the high-voltage (HV) CMOS silicon sensor chip, as well as its radiation hardness. Since the total collected charge from minimum ionizing particle (MIP) for the CMOS s...

The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The ...

In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, th...

Abstract 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification ...