International audience; A physics-based device simulation was used to study the charge carrier distribution and the electric field configuration inside simplified two-dimensional models for pixel layouts based on the ATLAS pixel sensor. In order to study the behavior of...

Comment: Version including referee comments, accepted by Trans. Nucl. Sci., proceedings for IEEE RealTime 2014 conference. 8 pages

In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the signific...

The response of n+p silicon strip sensors to electrons from a 90Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The ...

info:eu-repo/semantics/published

3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This ty...

Comment: 3 pages -- EPS-HEP'13 European Physical Society Conference on High Energy Physics (July, 18-24, 2013) at Stockholm, Sweden

Abstract The optical emission from the 5d – 4f allowed transition of Pr 3+ ions embedded in sol-gel silica is investigated for High Energy Physics applications requiring fast scintillating materials. A complete and detailed characterization of the optical, scintillation...

In the deep n-well (DNW) monolithic active pixel sensor (MAPS) a full in-pixel signal processing chain is integrated by exploiting the triple well option of a deep submicron CMOS process. This work is concerned with the design and characterization of DNW MAPS fabricated...

Abstract 3D silicon sensors, where plasma micromachining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, were successfully manufactured in facilities in Europe and USA. In 2011 the technology underwent a qualification ...