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This work was supported by the Technology Agency of the Czech Republic (Grant No. TE01020233), H2020 Twinning programme (project SINNCE, 810626), Grant Agency of the Czech Republic (grant 17-33767L), and MEYS CR (grant No. LQ1601 – CEITEC 2020). We also acknowledge the support by the Grant Agency of the Czech Republic (grant No. 17-21413S).
This file contains the raw unprocessed experimental data for the results published in Jindřich Mach et al., Low temperature selective growth of GaN single crystals on pre-patterned Si substrates, Applied Surface Science, Volume 497, 16 August 2019, 143705.
Selective growth, GaN
Selective growth, GaN
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influence This indicator reflects the overall/total impact of an article in the research community at large, based on the underlying citation network (diachronically). | Average | |
impulse This indicator reflects the initial momentum of an article directly after its publication, based on the underlying citation network. | Average |